onsemi · FETs & Power MOSFETs · MPN FQPF7N80C
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| Gate Charge(Qg) | 35nC@640V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 6.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 56W |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | 1.9Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.68nF |
N-Channel 800V 6.6A 56W Through Hole TO-220F