onsemi FQPF7N65C

onsemi · FETs & Power MOSFETs · MPN FQPF7N65C

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Specifications

Gate Charge(Qg)36nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)130pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation52W
Reverse Transfer Capacitance (Crss@Vds)16pF
RDS(on)1.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.245nF
TypeN-Channel

Technical details

N-Channel 650V 7A 52W Through Hole TO-220F

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