onsemi · FETs & Power MOSFETs · MPN FQPF70N10
No reviews yet — be the first to review onsemi FQPF70N10.
| Gate Charge(Qg) | 110nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 940pF |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 62W |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| RDS(on) | 23mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.3nF |
| Type | N-Channel |
N-Channel 100V 35A 62W Through Hole TO-220F