onsemi · FETs & Power MOSFETs · MPN FQPF5P20RDTU
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| Gate Charge(Qg) | 10nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 3.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 38W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 1.1Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 330pF |
200V 3.4A 5V 38W 1.1Ω@10V 1 P-Channel TO-220F-3 Single FETs, MOSFETs RoHS