onsemi FQPF5N90

onsemi · FETs & Power MOSFETs · MPN FQPF5N90

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage900V
Output Capacitance(Coss)145pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation51W
Reverse Transfer Capacitance (Crss@Vds)17pF
RDS(on)2.3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.55nF
TypeN-Channel

Technical details

900V 3A 5V 51W 2.3Ω@10V 1 N-channel N-Channel TO-220F-3 Single FETs, MOSFETs RoHS

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