onsemi FQPF5N60C

onsemi · FETs & Power MOSFETs · MPN FQPF5N60C

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Specifications

Gate Charge(Qg)19nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)72pF
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation33W
Reverse Transfer Capacitance (Crss@Vds)8.5pF
RDS(on)2.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)670pF
TypeN-Channel

Technical details

600V 4.5A 4V 33W 2.5Ω@10V 1 N-channel N-Channel TO-220F-3 Single FETs, MOSFETs RoHS

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