onsemi FQPF4N90C

onsemi · FETs & Power MOSFETs · MPN FQPF4N90C

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Specifications

Gate Charge(Qg)22nC@10V
Drain to Source Voltage900V
Output Capacitance(Coss)85pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation47W
Reverse Transfer Capacitance (Crss@Vds)7.3pF
RDS(on)4.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)960pF
TypeN-Channel

Technical details

N-Channel 900V 4A 47W Through Hole TO-220F-3

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