onsemi FQPF3N80C

onsemi · FETs & Power MOSFETs · MPN FQPF3N80C

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Specifications

Gate Charge(Qg)16.5nC@10V
Drain to Source Voltage800V
Output Capacitance(Coss)70pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation39W
Reverse Transfer Capacitance (Crss@Vds)7.5pF
RDS(on)4.8Ω@10V
Number1 N-channel
Input Capacitance(Ciss)705pF
TypeN-Channel

Technical details

800V 3A 5V 39W 4.8Ω@10V 1 N-channel N-Channel TO-220F-3 Single FETs, MOSFETs RoHS

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