onsemi FQPF34N20

onsemi · FETs & Power MOSFETs · MPN FQPF34N20

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)78nC@10V
Output Capacitance(Coss)560pF
Current - Continuous Drain(Id)17.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation55W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)75mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.1nF
TypeN-Channel

Technical details

200V 17.5A 5V 55W 75mΩ@10V 1 N-channel N-Channel TO-220F-3 Single FETs, MOSFETs RoHS

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