onsemi · FETs & Power MOSFETs · MPN FQPF33N10
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| Gate Charge(Qg) | 51nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 41W |
| RDS(on) | 52mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.5nF |
100V 18A 4V 41W 52mΩ@10V 1 N-channel TO-220F-3 Single FETs, MOSFETs RoHS