onsemi · FETs & Power MOSFETs · MPN FQPF1N60
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| Gate Charge(Qg) | 6nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 25pF |
| Current - Continuous Drain(Id) | 900mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 21W |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 11.5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 150pF |
| Type | N-Channel |
600V 900mA 5V 21W 11.5Ω@10V 1 N-channel N-Channel TO-220F-3 Single FETs, MOSFETs RoHS