onsemi · FETs & Power MOSFETs · MPN FQPF19N20T
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| Gate Charge(Qg) | 40nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 290pF |
| Current - Continuous Drain(Id) | 11.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 150mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.6nF |
| Type | N-Channel |
200V 11.8A 5V 50W 150mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS