onsemi FQPF13N50C

onsemi · FETs & Power MOSFETs · MPN FQPF13N50C

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Specifications

Configuration-
Gate Charge(Qg)56nC@400V
Drain to Source Voltage500V
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation195W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)480mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.055nF

Technical details

500V 13A 4V 195W 480mΩ@10V 1 N-channel TO-220F Single FETs, MOSFETs RoHS

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