onsemi · FETs & Power MOSFETs · MPN FQPF10N60C
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| Gate Charge(Qg) | 44nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 9.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 156W |
| Reverse Transfer Capacitance (Crss@Vds) | 24pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.04nF |
600V 9.5A 4V 156W 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS