onsemi FQPF10N50CF

onsemi · FETs & Power MOSFETs · MPN FQPF10N50CF

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Specifications

Drain to Source Voltage500V
Gate Charge(Qg)56nC@10V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)24pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)2.096nF

Technical details

500V 10A 4V 48W 1 N-channel TO-220F-3 Single FETs, MOSFETs RoHS

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