onsemi · FETs & Power MOSFETs · MPN FQPF10N50CF
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| Drain to Source Voltage | 500V |
|---|---|
| Gate Charge(Qg) | 56nC@10V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 48W |
| Reverse Transfer Capacitance (Crss@Vds) | 24pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.096nF |
500V 10A 4V 48W 1 N-channel TO-220F-3 Single FETs, MOSFETs RoHS