onsemi · FETs & Power MOSFETs · MPN FQP9P25
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| Gate Charge(Qg) | 38nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 9.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 120W |
| RDS(on) | 620mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.18nF |
250V 9.4A 5V 120W 620mΩ@10V 1 P-Channel TO-220 Single FETs, MOSFETs RoHS