onsemi FQP9N90C

onsemi · FETs & Power MOSFETs · MPN FQP9N90C

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Specifications

Gate Charge(Qg)58nC@10V
Drain to Source Voltage900V
Output Capacitance(Coss)230pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation205W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)1.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)2.73nF
TypeN-Channel

Technical details

N-Channel 900V 8A 205W Through Hole TO-220

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