onsemi FQP8N80C

onsemi · FETs & Power MOSFETs · MPN FQP8N80C

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Specifications

Gate Charge(Qg)45nC
Drain to Source Voltage800V
Output Capacitance(Coss)175pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation4.5W
Reverse Transfer Capacitance (Crss@Vds)17pF
RDS(on)1.55Ω@10V
Number1 N-channel
Input Capacitance(Ciss)2.05nF
TypeN-Channel

Technical details

800V 8A 5V 4.5W 1.55Ω@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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