onsemi · FETs & Power MOSFETs · MPN FQP6N80C
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| Gate Charge(Qg) | 30nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 5.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 158W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 2.5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.31nF |
N-Channel 800V 5.5A 158W Through Hole TO-220