onsemi FQP6N70

onsemi · FETs & Power MOSFETs · MPN FQP6N70

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage700V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)6.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation142W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)1.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.4nF
TypeN-Channel

Technical details

700V 6.2A 5V 142W 1.5Ω@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS

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