onsemi FQP6N50

onsemi · FETs & Power MOSFETs · MPN FQP6N50

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Specifications

Drain to Source Voltage500V
Gate Charge(Qg)22nC@10V
Output Capacitance(Coss)110pF
Current - Continuous Drain(Id)5.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation98W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)1.3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)790pF
TypeN-Channel

Technical details

500V 5.5A 5V 98W 1.3Ω@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS

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