onsemi · FETs & Power MOSFETs · MPN FQP4N80
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| Drain to Source Voltage | 800V |
|---|---|
| Gate Charge(Qg) | 25nC@10V |
| Output Capacitance(Coss) | 100pF |
| Current - Continuous Drain(Id) | 3.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 4W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 3.6Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 880pF |
| Type | N-Channel |
N-Channel 800V 3.9A 4W Through Hole TO-220