onsemi FQP4N50

onsemi · FETs & Power MOSFETs · MPN FQP4N50

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Specifications

Drain to Source Voltage500V
Gate Charge(Qg)13nC@10V
Output Capacitance(Coss)70pF
Current - Continuous Drain(Id)3.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)2.7Ω@10V
Number1 N-channel
Input Capacitance(Ciss)460pF
TypeN-Channel

Technical details

500V 3.4A 5V 70W 2.7Ω@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS

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