onsemi FQP4N20L

onsemi · FETs & Power MOSFETs · MPN FQP4N20L

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Specifications

Gate Charge(Qg)5.2nC
Drain to Source Voltage200V
Output Capacitance(Coss)45pF
Current - Continuous Drain(Id)3.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)1.35Ω@10V
Number1 N-channel
Input Capacitance(Ciss)310pF
TypeN-Channel

Technical details

200V 3.8A 2V 45W 1.35Ω@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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