onsemi · FETs & Power MOSFETs · MPN FQP3P20
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| Gate Charge(Qg) | 8nC@160V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 2.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 2.7Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 250pF |
200V 2.8A 3V 2.7Ω@10V 1 P-Channel TO-220 Single FETs, MOSFETs RoHS