onsemi · FETs & Power MOSFETs · MPN FQP3N80C
No reviews yet — be the first to review onsemi FQP3N80C.
| Drain to Source Voltage | 800V |
|---|---|
| Gate Charge(Qg) | 16.5nC@10V |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 107W |
| RDS(on) | 4.8Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 705pF |
800V 3A 5V 107W 4.8Ω@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS