onsemi FQP3N60C

onsemi · FETs & Power MOSFETs · MPN FQP3N60C

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Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)3.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)565pF
TypeN-Channel

Technical details

600V 3A 4V 75W 3.4Ω@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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