onsemi FQP30N06

onsemi · FETs & Power MOSFETs · MPN FQP30N06

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)25nC@10V
Output Capacitance(Coss)350pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation79W
Reverse Transfer Capacitance (Crss@Vds)52pF
RDS(on)40mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)945pF
TypeN-Channel

Technical details

60V 30A 4V 79W 40mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS

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