onsemi FQP2N90

onsemi · FETs & Power MOSFETs · MPN FQP2N90

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage900V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)2.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation4W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)7.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)500pF
TypeN-Channel

Technical details

900V 2.2A 5V 4W 7.2Ω@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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