onsemi FQP27P06

onsemi · FETs & Power MOSFETs · MPN FQP27P06

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Specifications

Gate Charge(Qg)43nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)27A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation120W
RDS(on)70mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.4nF

Technical details

60V 27A 4V 120W 70mΩ@10V 1 P-Channel TO-220 Single FETs, MOSFETs RoHS

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