onsemi · FETs & Power MOSFETs · MPN FQP27P06
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| Gate Charge(Qg) | 43nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 27A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 120W |
| RDS(on) | 70mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.4nF |
60V 27A 4V 120W 70mΩ@10V 1 P-Channel TO-220 Single FETs, MOSFETs RoHS