onsemi FQP20N06TSTU

onsemi · FETs & Power MOSFETs · MPN FQP20N06TSTU

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation53W
RDS(on)60mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)590pF

Technical details

60V 20A 4V 53W 60mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS

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