onsemi · FETs & Power MOSFETs · MPN FQP19N10L
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 18nC@5V |
| Output Capacitance(Coss) | 210pF |
| Current - Continuous Drain(Id) | 19A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 75W |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| RDS(on) | 100mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 870pF |
| Type | N-Channel |
100V 19A 2V 75W 100mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS