onsemi · FETs & Power MOSFETs · MPN FQP17P10
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | - |
| Output Capacitance(Coss) | 400pF |
| Current - Continuous Drain(Id) | 16.5A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF |
| RDS(on) | 190mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.1nF |
| Type | P-Channel |
100V 16.5A 4V 100W 190mΩ@10V 1 P-Channel P-Channel TO-220-3 Single FETs, MOSFETs RoHS