onsemi · FETs & Power MOSFETs · MPN FQP17P06
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| Gate Charge(Qg) | 27nC@48V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 17A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 79W |
| Reverse Transfer Capacitance (Crss@Vds) | 105pF |
| RDS(on) | 120mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 900pF |
60V 17A 4V 79W 120mΩ@10V 1 P-Channel TO-220 Single FETs, MOSFETs RoHS