onsemi · FETs & Power MOSFETs · MPN FQP13N50C
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| Configuration | Half-Bridge |
|---|---|
| Gate Charge(Qg) | 56nC@10V |
| Drain to Source Voltage | 500V |
| Output Capacitance(Coss) | 235pF |
| Current - Continuous Drain(Id) | 13A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 195W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 480mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.055nF |
500V 13A 4V 195W 480mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS