onsemi · FETs & Power MOSFETs · MPN FQP11P06
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | - |
| Current - Continuous Drain(Id) | 11.4A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 175mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 550pF |
60V 11.4A 2V 175mΩ@10V 1 P-Channel TO-220-3 Single FETs, MOSFETs RoHS