onsemi FQP11P06

onsemi · FETs & Power MOSFETs · MPN FQP11P06

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)-
Current - Continuous Drain(Id)11.4A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)175mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)550pF

Technical details

60V 11.4A 2V 175mΩ@10V 1 P-Channel TO-220-3 Single FETs, MOSFETs RoHS

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