onsemi FQP11N40C

onsemi · FETs & Power MOSFETs · MPN FQP11N40C

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Specifications

Drain to Source Voltage400V
Gate Charge(Qg)35nC@10V
Output Capacitance(Coss)325pF
Current - Continuous Drain(Id)10.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation135W
Reverse Transfer Capacitance (Crss@Vds)110pF
RDS(on)530mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.09nF
TypeN-Channel

Technical details

N-Channel 400V 10.5A 135W Through Hole TO-220

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