onsemi · FETs & Power MOSFETs · MPN FQP10N60C
No reviews yet — be the first to review onsemi FQP10N60C.
| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 57nC@10V |
| Output Capacitance(Coss) | 215pF |
| Current - Continuous Drain(Id) | 9.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 156W |
| Reverse Transfer Capacitance (Crss@Vds) | 24pF |
| RDS(on) | 730mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.04nF |
| Type | N-Channel |
600V 9.5A 4V 156W 730mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS