onsemi · FETs & Power MOSFETs · MPN FQP10N20L
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| Gate Charge(Qg) | 17nC |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 125pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 87W |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| RDS(on) | 360mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 830pF |
| Type | N-Channel |
200V 10A 2V 87W 360mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs