onsemi FQNL1N50BTA

onsemi · FETs & Power MOSFETs · MPN FQNL1N50BTA

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Specifications

Gate Charge(Qg)5.5nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)30pF
Current - Continuous Drain(Id)270mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.7V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)9Ω@10V
Number1 N-channel
Input Capacitance(Ciss)150pF
TypeN-Channel

Technical details

500V 270mA 3.7V 1.5W 9Ω@10V 1 N-channel N-Channel TO-92-3 Single FETs, MOSFETs RoHS

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