onsemi · FETs & Power MOSFETs · MPN FQNL1N50BBU
No reviews yet — be the first to review onsemi FQNL1N50BBU.
| Drain to Source Voltage | 500V |
|---|---|
| Gate Charge(Qg) | 5.5nC@10V |
| Output Capacitance(Coss) | 30pF |
| Current - Continuous Drain(Id) | 270mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.7V |
| Pd - Power Dissipation | 12mW |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 9Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 150pF |
| Type | N-Channel |
500V 270mA 3.7V 12mW 9Ω@10V 1 N-channel N-Channel TO-92-3 Single FETs, MOSFETs RoHS