onsemi · FETs & Power MOSFETs · MPN FQN1N60CBU
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| Gate Charge(Qg) | 6.2nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 300mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 1W;3W |
| RDS(on) | 11.5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 170pF |
600V 300mA 4V 11.5Ω@10V 1 N-channel TO-92-3 Single FETs, MOSFETs RoHS