onsemi · FETs & Power MOSFETs · MPN FQN1N50CTA
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| Gate Charge(Qg) | 4.9nC@400V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 380mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 890mW |
| Reverse Transfer Capacitance (Crss@Vds) | 4.1pF |
| RDS(on) | 6Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 195pF |
500V 380mA 4V 890mW 6Ω@10V 1 N-channel TO-92-3 Single FETs, MOSFETs RoHS