onsemi · FETs & Power MOSFETs · MPN FQI8N60CTU
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 36nC@10V |
| Current - Continuous Drain(Id) | 7.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.13W;147W |
| RDS(on) | 1.2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.255nF |
600V 7.5A 4V 1.2Ω@10V 1 N-channel I2PAK(TO-262) Single FETs, MOSFETs RoHS