onsemi · FETs & Power MOSFETs · MPN FQI4P40TU
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| Gate Charge(Qg) | 23nC@10V |
|---|---|
| Drain to Source Voltage | 400V |
| Current - Continuous Drain(Id) | 3.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 85W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 3.1Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 680pF |
| Type | P-Channel |
400V 3.5A 5V 85W 3.1Ω@10V 1 P-Channel P-Channel I2PAK(TO-262) Single FETs, MOSFETs RoHS