onsemi · FETs & Power MOSFETs · MPN FQI4N25TU
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| Gate Charge(Qg) | 5.6nC |
|---|---|
| Drain to Source Voltage | 250V |
| Output Capacitance(Coss) | 45pF |
| Current - Continuous Drain(Id) | 3.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 52W |
| Reverse Transfer Capacitance (Crss@Vds) | 6.5pF |
| RDS(on) | 1.75Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 200pF |
| Type | N-Channel |
250V 3.6A 5V 52W 1.75Ω@10V 1 N-channel N-Channel I2PAK(TO-262) Single FETs, MOSFETs RoHS