onsemi · FETs & Power MOSFETs · MPN FQI4N20
No reviews yet — be the first to review onsemi FQI4N20.
| Gate Charge(Qg) | 6.5nC |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 45pF |
| Current - Continuous Drain(Id) | 3.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 45W |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 1.4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 220pF |
| Type | N-Channel |
200V 3.6A 5V 45W 1.4Ω@10V 1 N-channel N-Channel I2PAK(TO-262) Single FETs, MOSFETs