onsemi · FETs & Power MOSFETs · MPN FQI3N80TU
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| Gate Charge(Qg) | 19nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Output Capacitance(Coss) | 75pF |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 3.13W |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 690pF |
| Type | N-Channel |
800V 3A 5V 3.13W 5Ω@10V 1 N-channel N-Channel I2PAK(TO-262) Single FETs, MOSFETs RoHS