onsemi FQI3N80TU

onsemi · FETs & Power MOSFETs · MPN FQI3N80TU

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Specifications

Gate Charge(Qg)19nC@10V
Drain to Source Voltage800V
Output Capacitance(Coss)75pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation3.13W
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)690pF
TypeN-Channel

Technical details

800V 3A 5V 3.13W 5Ω@10V 1 N-channel N-Channel I2PAK(TO-262) Single FETs, MOSFETs RoHS

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