onsemi · FETs & Power MOSFETs · MPN FQI27N25TU-F085
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| Gate Charge(Qg) | 49nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Output Capacitance(Coss) | 350pF |
| Current - Continuous Drain(Id) | 25.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 417W |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| RDS(on) | 131mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.8nF |
250V 25.5A 5V 417W 131mΩ@10V 1 N-channel I2PAK(TO-262) Single FETs, MOSFETs RoHS