onsemi · FETs & Power MOSFETs · MPN FQH8N100C
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| Gate Charge(Qg) | 70nC@10V |
|---|---|
| Drain to Source Voltage | 1kV |
| Output Capacitance(Coss) | 255pF |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 225W |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| RDS(on) | 1.45Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.22nF |
| Type | N-Channel |
1kV 8A 5V 225W 1.45Ω@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS